Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計(jì)算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計(jì)算機(jī)磁盤驅(qū)動(dòng)器和汽車系統(tǒng)中的運(yùn)動(dòng)控制。 Vishay/Siliconix模擬開關(guān)IC用于對(duì)儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號(hào)進(jìn)行感應(yīng)、開關(guān)和路徑設(shè)定。 |
| 圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
|---|---|---|---|---|---|---|
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SI4500BDY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 20V 7/4.5A 2.5W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 1... | ||||||
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SI4500BDY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 20V 9.1/5.3A 2.5W 20/60mohm @ 4.5V | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 1... | ||||||
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SI4500DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 20V 7/4.5A 2.5W | ||
| 參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極連續(xù)電流:7... | ||||||
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SI4500DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 20V 7/4.5A 2.5W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 1... | ||||||
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SI4500DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 20V 7/4.5A 2.5W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 1... | ||||||
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SI4500DY-T1-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 20V 7/4.5A 2.5W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 1... | ||||||
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SI4501ADY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30/8V 8.8/5.7A 1.3W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 8 V,閘/源擊穿電壓:... | ||||||
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SI4501ADY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 30/8V 8.8/5.7A | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 8 V,閘/源擊穿電壓:... | ||||||
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SI4501ADY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 30/8.0V 8.8/5.7A 18/42mohm @ 10/4.5V | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 8 V,閘/源擊穿電壓:... | ||||||
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Si4501BDY-T1-GE3 | Vishay/Siliconix | 8-SOIC | 165 | MOSFET 30 Volts 12 Amps 4.5 Watts | |
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, - 8 V,閘/源擊穿電... | ||||||
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SI4501DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30/8V 9/6.2A | ||
| 參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 8 V,閘/源擊穿電壓:+/- 20 V, +/... | ||||||
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SI4501DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30/8V 9/6.2A | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 8 V,閘/源擊穿電壓:... | ||||||
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SI4501DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30/8 9/6.2A | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 8 V,閘/源擊穿電壓:... | ||||||
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SI4501DY-T1-E3 | Vishay/Siliconix | SOIC-8 Narrow | 159 | MOSFET 30/8 9/6.2A | |
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 8 V,閘/源擊穿電壓:... | ||||||
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SI4505DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30/8V 7.8/5.0A 1.2W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 8 V,閘/源擊穿電壓:... | ||||||
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SI4505DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 30/8.0V 7.8/5.0A 18/42mohm @ 10/4.5V | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 8 V,閘/源擊穿電壓:... | ||||||
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SI4511DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET +20/-20V +9.6/-6.2A | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+ /- ... | ||||||
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SI4511DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 20V 9.6/6.2A 2.0W 14.5/33mohm@10/4.5V | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+ /- ... | ||||||
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SI4532ADY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 4.9/3.9A 2W | ||
| 參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:4... | ||||||
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SI4532ADY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 4.9/3.9A 2W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 2... | ||||||
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