| 圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
|---|---|---|---|---|---|---|
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IHW15N120R | Infineon Technologies | TO-247-3 | IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 15A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1200 V,柵極/發(fā)射極最大電壓:+... | ||||||
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IHW15N120R2 | Infineon Technologies | PG-TO247-3-1 | IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 15A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1.2 KV,集電極—射極飽和電壓:1... | ||||||
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IHW15N120R3 | Infineon Technologies | IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body | |||
| 參數(shù):制造商:Infineon,RoHS:是,包裝形式:Tube,零件號(hào)別名:IHW15N120R3FKSA1 IHW15N120R3XK SP000521590,... | ||||||
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IHW15T120 | Infineon Technologies | TO-247-3 | IGBT 晶體管 LOW LOSS DuoPack 1200V 15A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1.2 KV,集電極—射極飽和電壓:2... | ||||||
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IHW20N120R | Infineon Technologies | TO-247-3 | IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 20A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1200 V,柵極/發(fā)射極最大電壓:+... | ||||||
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IHW20N120R2 | Infineon Technologies | PG-TO247-3-1 | IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 20A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1.2 KV,集電極—射極飽和電壓:1... | ||||||
|
IHW20N120R3 | Infineon Technologies | TO247-3 | 227 | IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body | |
| 參數(shù):制造商:Infineon,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1200 V,集電極—射極飽和電壓:1.48 V,柵極/發(fā)射極最大... | ||||||
|
IHW20N135R3FKSA1 | Infineon Technologies | PG-TO247-3-1 | IGBT 晶體管 | ||
| 參數(shù):制造商:Infineon,RoHS:是,集電極—發(fā)射極最大電壓 VCEO:1.35 kV,集電極—射極飽和電壓:1.8 V,柵極/發(fā)射極最大電壓:20 V,在2... | ||||||
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IHW20T120 | Infineon Technologies | TO-247-3 | IGBT 晶體管 LOW LOSS DuoPack 1200V 20A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1.2 KV,集電極—射極飽和電壓:2... | ||||||
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IHW25N120R2 | Infineon Technologies | TO-247-3 | IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 25A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1.2 KV,集電極—射極飽和電壓:1... | ||||||
|
IHW30N100R | Infineon Technologies | PG-TO247-3-1 | IGBT 晶體管 REVERSE CONDUCT IGBT 1000V 30A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1 KV,集電極—射極飽和電壓:1.7... | ||||||
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IHW30N100T | Infineon Technologies | TO-247-3 | IGBT 晶體管 LOW LOSS DuoPack 1000V 30A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1 KV,集電極—射極飽和電壓:1.5... | ||||||
|
IHW30N110R3 | Infineon Technologies | TO-247 | 187 | IGBT 晶體管 IGBT PRODUCTS | |
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1100 V,集電極—射極飽和電壓:1... | ||||||
|
IHW30N120R | Infineon Technologies | TO-247-3 | IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 30A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1200 V,柵極/發(fā)射極最大電壓:+... | ||||||
|
IHW30N120R2 | Infineon Technologies | PG-TO247-3-1 | IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 30A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1.2 KV,集電極—射極飽和電壓:2... | ||||||
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IHW30N120R2FKSA1 | Infineon Technologies | IGBT 晶體管 IGBT PRODUCTS | |||
| 參數(shù):制造商:Infineon,... | ||||||
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IHW30N120R3 | Infineon Technologies | IGBT 晶體管 | |||
| 參數(shù):制造商:Infineon,... | ||||||
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IHW30N135R3FKSA1 | Infineon Technologies | PG-TO247-3 | IGBT 晶體管 IGBT PRODUCTS | ||
| 參數(shù):制造商:Infineon,RoHS:是,集電極—發(fā)射極最大電壓 VCEO:1.35 kV,集電極—射極飽和電壓:1.85 V,柵極/發(fā)射極最大電壓:20 V,在... | ||||||
|
IHW30N160R2 | Infineon Technologies | TO-247-3 | IGBT 晶體管 RC-IGBT MONO DIODE 1600V 30A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:1.6 KV,集電極—射極飽和電壓:2... | ||||||
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IHW30N60T | Infineon Technologies | TO-247-3 | IGBT 晶體管 LOW LOSS DuoPack 600V 30A | ||
| 參數(shù):制造商:Infineon,產(chǎn)品種類:IGBT 晶體管,RoHS:是,配置:Single,集電極—發(fā)射極最大電壓 VCEO:600 V,集電極—射極飽和電壓:1.... | ||||||
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