Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計(jì)算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計(jì)算機(jī)磁盤(pán)驅(qū)動(dòng)器和汽車系統(tǒng)中的運(yùn)動(dòng)控制。 Vishay/Siliconix模擬開(kāi)關(guān)IC用于對(duì)儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號(hào)進(jìn)行感應(yīng)、開(kāi)關(guān)和路徑設(shè)定。 |
| 圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
|---|---|---|---|---|---|---|
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SUB75N04-05L-E3 | Vishay/Siliconix | TO-263-3 | MOSFET 40V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N05-06 | Vishay/Siliconix | TO-263-3 | MOSFET 50V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:50 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N05-06-E3 | Vishay/Siliconix | TO-263-3 | MOSFET 50V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:50 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N05-07 | Vishay/Siliconix | TO-263-3 | MOSFET 55V 75A 158W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:55 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N05-07-E3 | Vishay/Siliconix | TO-263-3 | MOSFET 55V 75A 158W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:55 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N06-06 | Vishay/Siliconix | TO-263-3 | MOSFET 60V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:過(guò)渡期間,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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SUB75N06-07L | Vishay/Siliconix | TO-263-3 | MOSFET 60V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N06-07L-E3 | Vishay/Siliconix | TO-263-3 | MOSFET 60V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N06-08 | Vishay/Siliconix | TO-263-3 | MOSFET 60V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N06-08-E3 | Vishay/Siliconix | TO-263-3 | MOSFET 60V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N06-12L | Vishay/Siliconix | TO-263-3 | MOSFET 60V 75A 142W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N06-12L-E3 | Vishay/Siliconix | TO-263-3 | MOSFET 60V 75A 142W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N08-09L | Vishay/Siliconix | TO-263-3 | MOSFET 75V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:75 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N08-09L-E3 | Vishay/Siliconix | TO-263-3 | MOSFET 75V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:75 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N08-10 | Vishay/Siliconix | TO-263-3 | MOSFET 75V 75A 187W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:75 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75N08-10-E3 | Vishay/Siliconix | TO-263-3 | MOSFET 75V 75A 187W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:75 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75P03-07 | Vishay/Siliconix | TO-263-3 | MOSFET 30V 75A 187W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75P03-07-E3 | Vishay/Siliconix | TO-263(D2Pak) | MOSFET 30V 75A 187W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75P03-08 | Vishay/Siliconix | TO-263-3 | MOSFET 30V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUB75P03-08-E3 | Vishay/Siliconix | TO-263-3 | MOSFET 30V 75A 250W | ||
| 參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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