| 圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
|---|---|---|---|---|---|---|
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MTC120W55GC-SMD | IXYS | - | IGBT MOD MOSFET SIXPACK ISOPLUS | ||
| 參數(shù)：IXYS|管件|-|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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FS20R06VE3B2BOMA1 | Infineon Technologies | 模塊 | IGBT MOD 600V 25A 71.5W | ||
| 參數(shù)：Infineon Technologies|托盤|-|最后售賣|-|三相反相器|600 V|25 A|71.5 W|2V @ 15V，20A|1 mA|1.14... | ||||||
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APT100GLQ65JU3 | Microchip Technology | 1500 | IGBT 600V 100A 430W ISOTOP | ||
| 參數(shù)：Microchip Technology|管件|-|在售|溝槽型場(chǎng)截止|單斬波器|650 V|165 A|430 W|2.3V @ 15V，1000A|50 μ... | ||||||
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APT100GLQ65JU2 | Microchip Technology | 1500 | IGBT MOD 650V 165A 430W ISOTOP | ||
| 參數(shù)：Microchip Technology|管件|-|在售|溝槽型場(chǎng)截止|升壓斬波器|650 V|165 A|430 W|2.3V @ 15V，100A|50 μ... | ||||||
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IXYN100N65B3D1 | IXYS | SOT-227B | DISC IGBT XPT-GENX3 SOT-227UI(MI | ||
| 參數(shù)：IXYS|管件|XPT?, GenX3?|在售|PT|單路|650 V|185 A|600 W|1.85V @ 15V，70A|50 μA|4.74 nF @ ... | ||||||
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MIXA60HU1200VA | IXYS | V1A-PAK | IGBT MOD 1200V 85A 290W V1A-PAK | ||
| 參數(shù)：IXYS|盒|-|在售|PT|2 個(gè)獨(dú)立式|1200 V|85 A|290 W|2.1V @ 15V，55A|500 μA|-|標(biāo)準(zhǔn)|無|-40°C ~ 150... | ||||||
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APT70GR120J | Microchip Technology | SOT-227-4 | 1500 | IGBT MOD 1200V 112A 543W SOT227 | |
| 參數(shù)：Microchip Technology|管件|-|在售|NPT|單路|1200 V|112 A|543 W|3.2V @ 15V，70A|1 mA|7.26 ... | ||||||
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APT46GA90JD40 | Microchip Technology | SOT-227-4 | 1500 | IGBT MODULE 900V 87A 284W ISOTOP | |
| 參數(shù)：Microchip Technology|管件|POWER MOS 8?|在售|PT|單路|900 V|87 A|284 W|3.1V @ 15V，47A|35... | ||||||
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FS20R06W1E3BOMA1 | Infineon Technologies | 模塊 | IGBT MODULE 600V 35A 135W | ||
| 參數(shù)：Infineon Technologies|托盤|EasyPACK?|在售|溝槽型場(chǎng)截止|三相反相器|600 V|35 A|135 W|2V @ 15V，20A... | ||||||
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APT47GA60JD40 | Microchip Technology | SOT-227-4 | 1500 | IGBT 600V 87A 283W SOT-227 | |
| 參數(shù)：Microchip Technology|管件|POWER MOS 8?|在售|PT|單路|600 V|87 A|283 W|2.5V @ 15V，47A|27... | ||||||
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MIXA150Q1200VA | IXYS | V1A-PAK | IGBT MOD 1200V 220A 695W V1A-PAK | ||
| 參數(shù)：IXYS|盒|-|在售|PT|單路|1200 V|220 A|695 W|2.1V @ 15V，150A|100 μA|-|標(biāo)準(zhǔn)|無|-40°C ~ 150°C... | ||||||
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MIXA150R1200VA | IXYS | V1A-PAK | IGBT MOD 1200V 220A 695W V1A-PAK | ||
| 參數(shù)：IXYS|盒|-|在售|PT|單路|1200 V|220 A|695 W|2.1V @ 15V，150A|500 μA|-|標(biāo)準(zhǔn)|無|-40°C ~ 150°C... | ||||||
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FS20R06W1E3B11BOMA1 | Infineon Technologies | 模塊 | IGBT MODULE 600V 35A 135W | ||
| 參數(shù)：Infineon Technologies|托盤|EasyPACK?|在售|溝槽型場(chǎng)截止|全橋|600 V|35 A|135 W|2V @ 15V，20A|1 ... | ||||||
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VS-GT250SA60S | Vishay General Semiconductor - Diodes Division | SOT-227 | IGBT MOD 600V 380A 893W SOT227 | ||
| 參數(shù)：Vishay General Semiconductor - Diodes Division|管件|-|在售|溝槽型場(chǎng)截止|單路|600 V|359 A|750... | ||||||
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IXGN50N120C3H1 | IXYS | SOT-227B | IGBT MOD 1200V 95A 460W SOT227B | ||
| 參數(shù)：IXYS|管件|GenX3?|在售|PT|單路|1200 V|95 A|460 W|4.2V @ 15V，40A|250 μA|4.3 nF @ 25 V|標(biāo)準(zhǔn)... | ||||||
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IXXN200N60B3H1 | IXYS | SOT-227B | IGBT MOD 600V 200A 780W SOT227B | ||
| 參數(shù)：IXYS|管件|XPT?, GenX3?|在售|PT|單路|600 V|200 A|780 W|1.7V @ 15V，100A|50 μA|9.97 nF @ ... | ||||||
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FS30R06W1E3B11BOMA1 | Infineon Technologies | 模塊 | IGBT MODULE 600V 45A 150W | ||
| 參數(shù)：Infineon Technologies|托盤|EasyPACK?|在售|溝槽型場(chǎng)截止|三相反相器|600 V|45 A|150 W|2V @ 15V，30A... | ||||||
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FP06R12W1T4B3BOMA1 | Infineon Technologies | 模塊 | IGBT MODULE 1200V 0 94W | ||
| 參數(shù)：Infineon Technologies|托盤|EasyPIM?|在售|溝槽型場(chǎng)截止|三相反相器|1200 V|12 A|94 W|2.25V @ 15V，6... | ||||||
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APT50GR120JD30 | Microchip Technology | SOT-227-4 | 1500 | IGBT MOD 1200V 84A 417W SOT227 | |
| 參數(shù)：Microchip Technology|管件|-|在售|NPT|單路|1200 V|84 A|417 W|3.2V @ 15V，50A|1.1 mA|5.55... | ||||||
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FP15R06W1E3B11BOMA1 | Infineon Technologies | 模塊 | IGBT MODULE 600V 22A 81W | ||
| 參數(shù)：Infineon Technologies|托盤|EasyPIM?|在售|溝槽型場(chǎng)截止|三相反相器|600 V|22 A|81 W|2V @ 15V，15A|1... | ||||||
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